 |
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
| Datasheet File OCR Text: |
| ON Semiconductort Complementary Silicon Power Transistors The 2N3773 and 2N6609 are PowerBaset power transistors designed for high power audio, disk head positioners and other linear applications. These devices can also be used in power switching circuits such as relay or solenoid drivers, dc to dc converters or inverters. 2N3773* 2N6609 *ON Semiconductor Preferred Device NPN PNP * High Safe Operating Area (100% Tested) 150 W @ 100 V * Completely Characterized for Linear Operation * High DC Current Gain and Low Saturation Voltage * hFE = 15 (Min) @ 8 A, 4 V VCE(sat) = 1.4 V (Max) @ IC = 8 A, IB = 0.8 A For Low Distortion Complementary Designs 16 AMPERE COMPLEMENTARY POWER TRANSISTORS 140 VOLTS 150 WATTS CASE 1-07 TO-204AA (TO-3) II I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I II I I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIII I I I I I I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I I IIIIIIIIIII I I I I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I I IIII I I I I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I I I I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I IIII I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII *MAXIMUM RATINGS Rating Symbol VCEO VCEX Value 140 160 160 7 Unit Vdc Vdc Vdc Vdc Adc Adc Collector Emitter Voltage Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage VCBO VEBO IC IB Collector Current -- Continuous -- Peak (1) Base Current -- Continuous -- Peak (1) 16 30 4 15 Total Power Dissipation @ TC = 25_C Derate above 25_C Operating and Storage Junction Temperature Range PD 150 0.855 Watts W/_C _C TJ, Tstg -65 to +200 THERMAL CHARACTERISTICS Characteristic Symbol RJC Max Unit Thermal Resistance, Junction to Case 1.17 _C/W *Indicates JEDEC Registered Data. (1) Pulse Test: Pulse Width = 5 ms, Duty Cycle v 10%. Preferred devices are ON Semiconductor recommended choices for future use and best overall value. (c) Semiconductor Components Industries, LLC, 2001 1 March, 2001 - Rev. 9 Publication Order Number: 2N3773/D II II I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I II I I II I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I III I I I I II I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I II I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II II I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I II I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I I I I II I II I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I II IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I II I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII III I I I I II I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIII IIIIIIIIIIIIIIIIIIIII I II I II I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I I IIIIIIIIIIIIIIIIIIIIII I II I II I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIII I III I I I I II I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I II I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I II I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II II I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I II I I II I II I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I II I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I II I I II I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I II I III I I I I II I I II I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I II I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII III I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I II I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII (2) Pulse Test: Pulse Width = 300 s, Duty Cycle v 2%. *Indicates JEDEC Registered Data. SECOND BREAKDOWN CHARACTERISTICS DYNAMIC CHARACTERISTICS ON CHARACTERISTICS (2) OFF CHARACTERISTICS (2) ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted) Second Breakdown Collector Current with Base Forward Biased t = 1 s (non-repetitive), VCE = 100 V, See Figure 12 *Small-Signal Current Gain (IC = 1 Adc, VCE = 4 Vdc, f = 1 kHz) Magnitude of Common-Emitter Small-Signal, Short-Circuit, Forward Current Transfer Ratio (IC = 1 A, f = 50 kHz) *Base-Emitter On Voltage (IC = 8 Adc, VCE = 4 Vdc) Collector-Emitter Saturation Voltage *(IC = 8 Adc, IB = 800 mAdc) (IC = 16 Adc, IB = 3.2 Adc) DC Current Gain *(IC = 8 Adc, VCE = 4 Vdc) (IC = 16 Adc, VCE = 4 Vdc) *Emitter Cutoff Current (VBE = 7 Vdc, IC = 0) Collector Cutoff Current (VCB = 140 Vdc, IE = 0) *Collector Cutoff Current (VCE = 140 Vdc, VBE(off) = 1.5 Vdc) (VCE = 140 Vdc, VBE(off) = 1.5 Vdc, TC = 150_C) *Collector Cutoff Current (VCE = 120 Vdc, IB = 0) Collector-Emitter Sustaining Voltage (IC = 0.2 Adc, RBE = 100 Ohms) *Collector-Emitter Sustaining Voltage (IC = 0.1 Adc, VBE(off) = 1.5 Vdc, RBE = 100 Ohms) *Collector-Emitter Breakdown Voltage (IC = 0.2 Adc, IB = 0) Characteristic 2N3773 2N6609 http://onsemi.com VCEO(sus) VCER(sus) VCEX(sus) Symbol VCE(sat) VBE(on) ICBO ICEO IEBO ICEX |hfe| hFE IS/b hfe Min 150 160 140 1.5 40 15 5 -- -- -- -- -- -- -- -- 4 Max 2.2 1.4 4 2 10 60 -- 10 -- -- -- -- -- -- 5 2 mAdc mAdc mAdc mAdc Unit Adc Vdc Vdc Vdc Vdc Vdc -- -- -- 2 2N3773 2N6609 NPN 300 200 hFE , DC CURRENT GAIN 100 70 50 30 20 10 7.0 5.0 0.2 0.3 VCE = 4 V 25C -55C 150C 300 200 25C hFE , DC CURRENT GAIN 100 70 50 30 20 10 7.0 0.5 0.7 1.0 2.0 3.0 5.0 7.0 IC, COLLECTOR CURRENT (AMPS) 10 20 5.0 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 IC, COLLECTOR CURRENT (AMPS) 10 20 VCE = 4 V -55C 150C PNP Figure 6. DC Current Gain Figure 7. DC Current Gain VCE , COLLECTOR-EMITTER VOLTAGE (VOLTS) 1.6 1.2 0.8 0.4 IC = 4 A VCE , COLLECTOR-EMITTER VOLTAGE (VOLTS) 2.0 2.0 1.6 1.2 0.8 0.4 TC = 25C 0 0.05 0.07 0.1 IC = 8 A IC = 4 A IC = 16 A IC = 8 A IC = 16 A TC = 25C 0 0.05 0.07 0.1 0.2 0.3 0.5 0.7 1.0 IB, BASE CURRENT (AMPS) 2.0 3.0 0.2 0.3 0.5 0.7 1.0 IB, BASE CURRENT (AMPS) 2.0 3.0 5.0 Figure 8. Collector Saturation Region Figure 9. Collector Saturation Region 2.0 IC/IB = 10 1.6 V, VOLTAGE (VOLTS) 1.2 0.8 0.4 0 0.2 0.3 VBE(sat) 25C 150C 150C VCE(sat) 2.0 3.0 25C 5.0 7.0 10 20 V, VOLTAGE (VOLTS) 2.0 IC/IB = 10 1.6 1.2 0.8 0.4 VCE(sat) 0.5 0.7 1.0 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 IC, COLLECTOR CURRENT (AMPS) IC, COLLECTOR CURRENT (AMPS) VBE(sat) 25C 150C 150C 25C Figure 10. "On" Voltage Figure 11. "On" Voltage http://onsemi.com 3 2N3773 2N6609 30 20 IC, COLLECTOR CURRENT (AMP) 10 5.0 3.0 2.0 1.0 0.5 0.3 0.2 0.1 BONDING WIRE LIMIT THERMAL LIMIT @ TC = 25C, SINGLE PULSE SECOND BREAKDOWN LIMIT dc 10 s 40 s 100 s 200 s 1.0 ms 100 ms 500 ms 0.05 0.03 3.0 200 300 5.0 7.0 10 20 30 50 70 100 VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS) Figure 12. Forward Bias Safe Operating Area There are two limitations on the power handling ability of a transistor: average junction temperature and second breakdown. Safe operating area curves indicate IC - VCE limits of the transistor that must be observed for reliable operation: i.e., the transistor must not be subjected to greater dissipation than the curves indicate. The data of Figure 7 is based on TJ(pk) = 200_C; TC is variable depending on conditions. Second breakdown pulse 100 POWER DERATING FACTOR (%) 80 60 40 20 0 THERMAL DERATING limits are valid for duty cycles to 10% provided TJ(pk) < 200_C. At high case temperatures, thermal limitations will reduce the power that can be handled to values less than the limitations imposed by second breakdown. 0 40 80 120 TC, CASE TEMPERATURE (C) 160 200 Figure 13. Power Derating http://onsemi.com 4 2N3773 2N6609 PACKAGE DIMENSIONS CASE 1-07 TO-204AA (TO-3) ISSUE Z A N C -T- E D U V 2 2 PL SEATING PLANE NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. ALL RULES AND NOTES ASSOCIATED WITH REFERENCED TO-204AA OUTLINE SHALL APPLY. K M 0.13 (0.005) L G 1 TQ M Y M -Y- H B -Q- 0.13 (0.005) M TY M DIM A B C D E G H K L N Q U V INCHES MIN MAX 1.550 REF --1.050 0.250 0.335 0.038 0.043 0.055 0.070 0.430 BSC 0.215 BSC 0.440 0.480 0.665 BSC --0.830 0.151 0.165 1.187 BSC 0.131 0.188 MILLIMETERS MIN MAX 39.37 REF --26.67 6.35 8.51 0.97 1.09 1.40 1.77 10.92 BSC 5.46 BSC 11.18 12.19 16.89 BSC --21.08 3.84 4.19 30.15 BSC 3.33 4.77 STYLE 1: PIN 1. BASE 2. EMITTER CASE: COLLECTOR http://onsemi.com 5 2N3773 2N6609 Notes http://onsemi.com 6 2N3773 2N6609 Notes http://onsemi.com 7 2N3773 2N6609 PowerBase is a trademark of Semiconductor Components Industries, LLC. ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. "Typical" parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including "Typicals" must be validated for each customer application by customer's technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. PUBLICATION ORDERING INFORMATION NORTH AMERICA Literature Fulfillment: Literature Distribution Center for ON Semiconductor P.O. Box 5163, Denver, Colorado 80217 USA Phone: 303-675-2175 or 800-344-3860 Toll Free USA/Canada Fax: 303-675-2176 or 800-344-3867 Toll Free USA/Canada Email: ONlit@hibbertco.com Fax Response Line: 303-675-2167 or 800-344-3810 Toll Free USA/Canada N. American Technical Support: 800-282-9855 Toll Free USA/Canada EUROPE: LDC for ON Semiconductor - European Support German Phone: (+1) 303-308-7140 (Mon-Fri 2:30pm to 7:00pm CET) Email: ONlit-german@hibbertco.com French Phone: (+1) 303-308-7141 (Mon-Fri 2:00pm to 7:00pm CET) Email: ONlit-french@hibbertco.com English Phone: (+1) 303-308-7142 (Mon-Fri 12:00pm to 5:00pm GMT) Email: ONlit@hibbertco.com EUROPEAN TOLL-FREE ACCESS*: 00-800-4422-3781 *Available from Germany, France, Italy, UK, Ireland CENTRAL/SOUTH AMERICA: Spanish Phone: 303-308-7143 (Mon-Fri 8:00am to 5:00pm MST) Email: ONlit-spanish@hibbertco.com Toll-Free from Mexico: Dial 01-800-288-2872 for Access - then Dial 866-297-9322 ASIA/PACIFIC: LDC for ON Semiconductor - Asia Support Phone: 1-303-675-2121 (Tue-Fri 9:00am to 1:00pm, Hong Kong Time) Toll Free from Hong Kong & Singapore: 001-800-4422-3781 Email: ONlit-asia@hibbertco.com JAPAN: ON Semiconductor, Japan Customer Focus Center 4-32-1 Nishi-Gotanda, Shinagawa-ku, Tokyo, Japan 141-0031 Phone: 81-3-5740-2700 Email: r14525@onsemi.com ON Semiconductor Website: http://onsemi.com For additional information, please contact your local Sales Representative. http://onsemi.com 8 2N3773/D |
Price & Availability of 2N3773-D
 |
|
|
|
|
All Rights Reserved © IC-ON-LINE 2003 - 2022 |
| [Add Bookmark] [Contact Us] [Link exchange] [Privacy policy] |
|
Mirror Sites : [www.datasheet.hk]
[www.maxim4u.com] [www.ic-on-line.cn]
[www.ic-on-line.com] [www.ic-on-line.net]
[www.alldatasheet.com.cn]
[www.gdcy.com]
[www.gdcy.net] |